Growth of well(111)-oriented Pt and Pt/Ti films on SiO2/Si(111) substrates and crystallinity of PZT films grown on the Pt(111)/SiO2/Si(111) and Pt(111)/Ti/SiO2Si(111) substrates have been investigated. It was found by X-ray diffraction analysis that well (111)-oriented Pt film with a best full-width at half maximum (FWHM) of 0.28° was grown by the DC sputtering method. PZT films were prepared by metallo-organic decomposition (MOD) on Pt(111)-coated SiO2Si(111) substrates. The crystallinity of the PZT films improved as the FWHM of the Pt(111) diffraction peak decreased. The best FWHM obtained for a PZT film grown on a Pt(111)/Ti/SiO2/Si(111) substrate was 0.33°.
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Bao et al. (1998) studied this question.
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