A novel quantum-well optoelectronic switching device with stimulated emission

A novel GaAs/GaAlAs quantum well optoelectronic switching device which exhibits an s-type negative differential resistance at room temperature and emits a high performance stimulated emission was demonstrated. The device structure is similar to the conventional separate confinement heterojunction quantum-well laser and thus can be easily integrated with the optoelectronic integrated circuits. The devices can be switched optically and/or electrically. Threshold current densities of 1.2 kA/cm2, differential quantum efficiencies as high as 67% (0.5 W/A slope efficiency per facet) and output power in excess of 50 mW per facet were obtained. To date, this is one of the best overall performances in terms of output power, differential quantum efficiency and threshold current density for the optoelectronic switching devices exhibiting stimulated emission capability.