1μm gate GaAs MESFETs with AlGaAs/GaAs buffer layers were grown on (100) InP substrates by low-pressure MOCVD. The linewidth of the X-ray rocking curve on this material is 315 arc seconds. Device transconductance of 220mS/mm and output conductance of l.2 mS/mm were achieved.
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Lo et al. (1988) studied this question.