Proton induced x-ray emission has been used, in combination with channeling, to study the displacements of Ga and As atoms in GaAs (100) crystal after ion implantation. O+, S+, and Ar+ ions of various doses were used for implantation. Results indicate a slightly higher displacement of Ga (≲4%) than As atoms for the implantation conditions employed here.
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R. S. Bhattacharya (1984) studied this question.
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