Characteristics of a newly developed static induction thyristor (SIThy) are described. The SIThy is irradiated by 2-MeV protons to improve the switching speed as a result of local carrier lifetime control. The characteristics of the proton irradiated SIThy are controlled by annealing conditions to obtain devices for various applications. The switching speed of the SIThy is very high; for example, at an anode current of 50 A, its rise time, storage time, and fall time are 100 ns, 60 ns, and 50 ns, respectively. Thus the newly developed SIThy is suitable for high-speed switching devices.
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Nakamura et al. (1986) studied this question.
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