PbTiO 3 –PbO–SiO 2 Glass‐Ceramic Thin Film by a Sol–Gel Process

PbTiO 3 (PT)‐PbO‐SiO 2 glass‐ceramic thin films were pro‐duced by a sol‐gel process. The crystallization of PT oc‐curred at ∼700°C and was higher than that in PT‐PbO‐B 2 O 3 sol‐gel glass‐ceramics. A pinhole‐free thin film was obtained by a rapid thermal annealing process when the designed glass‐forming phase content in the thin film was >24 vol%. The measured dielectric constants of the films fairly agreed with the predicted values, based on a parallel mixing model. The dielectric constant was 219 and the di‐electric loss was 0.04 in the 0.6PT‐0.4(PbO‐SiO 2 ) film that was fired at 700°C.