Preparation of Ti–Al–N Electrode Films by Pulsed Laser Ablation for Lead-Zirconate-Titanate Film Capacitors

Titanium-aluminum-nitride (Ti–Al–N; TAN) electrode films were prepared by pulsed laser ablation on (100)Si and (100)MgO substrates for ferroelectric lead-zirconate-titanate ( Pb(Zr0.52Ti0.48)O3; PZT) thin-film capacitors. Capacitors with rather randomly oriented PZT films on the TAN/(100)Si did not show a ferroelectric hysteresis loop, but the capacitor with preferentially [100]-oriented PZT film on the TAN/(100)MgO did. This suggests that a TAN-electrode film was grown on (100)MgO with a high oxidation resistance at the high temperature employed for ferroelectric oxide preparation.