Room-temperature operation of three-terminal quantum-confined field-effect light emitters

The field control of the luminescent characteristics is investigated with three-terminal field-effect light-emitting devices with superlattice buffer layers, showing a high-speed switching (∼0.8 ns) of emission intensity, free from lifetime limitation at room temperature and a high quantum yield of the emission intensity, i.e., an external efficiency ηex≥1%. It is demonstrated that a combination of the field control of radiative lifetime with carrier leakage results in a high-speed modulation of luminescence intensity under a fixed carrier population in the active layer, unchanged with and without electric fields.