Dilute CxSi1−x epitaxial films have been grown on Si(100) by remote plasma-enhanced chemical vapor deposition. Carbon concentrations of ∼3 at.% have been achieved at a growth temperature of 725 °C. No evidence for the formation or precipitation of SiC was found using x-ray diffraction and transmission electron microscopy.
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Posthill et al. (1990) studied this question.
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