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Perovskite PbTiO3 thin films were synthesized on Pt/SiO2/Si substrates at substrate temperatures between 500 and 600° C by metal-organic chemical vapor deposition (MOCVD) under high-vacuum conditions using Pb(DPM)2 (bis-dipivaloylmethanato lead) and Ti(i-OC3H7)4. Composition and structure of the films were investigated and a significant behavior wherein the obtained film suddenly changed from PbTiO3 to TiO2 with increasing feed rate of the Ti precursor was observed. Surface morphology of the obtained films was flat, suggesting that surface migration was important in high-vacuum MOCVD. Good step-coverage was also obtained.
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Yamashita et al. (1995) studied this question.
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