Epitaxial AlAs was grown on GaAs substrates, and polycrystalline AlAs films were deposited on quartz. The visible optical absorption edge indicated that the direct band gap was 3.5 eV while the indirect gap was 2.2 eV. Infrared interference fringes were measured and the high-frequency dielectric constant was determined to be 15.2. The transverse restrahl frequency was 400 cm−1.
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Henry T. Minden (1970) studied this question.
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