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Pores in GaAs in the micrometer range and oriented in 〈111〉 directions have been observed during the anodization of GaAs in aqueous HCl electrolytes. A direct evidence of pores intersection is presented which is a very promising feature for three-dimensional micro- and nanostructuring of III–V compounds for the production of photonic materials.
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Langa et al. (2001) studied this question.
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