Complementary‐Like Graphene Logic Gates Controlled by Electrostatic Doping

A facile electrostatic modulation method is developed to control the charge neutrality points of ambipolar graphene transistors and to form a complementary-like structure for the fabrication of elementary logic gates. Graphene logic NOR and NAND gates are demonstrated, which are building pillars for logic computation. The result provides a possible route for graphene logic circuits.