Ultrathin silicon nanomembranes (SiNMs) on insulators under local illumination reveal a gate-controlled photovoltaic effect and negative transconductance in Schottky transistors applying both homo- and heterocontacts. Tiny variations of Schottky barriers between source and drain contacts are responsible for the photovoltaic effect in ultrathin SiNMs and can be enhanced by gate voltage and/or contact design.
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Feng et al. (2010) studied this question.
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