Studies of the resistivity and Hall effect in n-type (221) Si/(112̄2) Al2O3 films have shown that the electron mobility is a strong function of azimuthal direction in the plane of the film. Typical variations in mobility between high- and low-mobility directions are approximately 40%. The anisotropy in mobility is explained on the basis of piezoresistance effects in Si, due to stresses induced by the differential thermal contraction between the Si and the Al2O3 substrate.
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Thorsen et al. (1972) studied this question.
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