Experimental analysis demonstrates a magnetoresistance minimum in epitaxial n-type GaAs, suggesting two competing transport mechanisms under weak magnetic fields.
Low-T magnetotransport data on epitaxial n-type GaAs, in the variable-range hopping regime, is presented at low magnetic field. The influence of the magnetic field on the parameters of Mott's law sigma = sigma 0 exp(-(T 0 /T) s ) is examined and appears to be very significant. A minimum in the variations of the magnetoresistance as a function of the magnetic field is attributed to two opposing mechanisms and is studied semi-empirically. The weak dependence of the magnetoresistance on the angle between the current and the magnetic field appears to be a distinctive feature of these two mechanisms.
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Benzaquen et al. (1988) studied this question.
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