Answers are grounded in this paper and cite their sources.
Out-diffusion of carbon from silicon wafers during annealing at 900 °C is observed to be enhanced by the in-diffusion of phosphorus as compared to annealing in a nitrogen ambient. This diffusion enhancement is suggested to be due to phosphorus-induced silicon self-interstitials and an appreciable diffusion component of carbon in silicon involving self-interstitials.
No takes yet. Share an insight, caveat, or question.
Kalejs et al. (1984) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: