An analytical model of the above-threshold characteristics of a small-geometry poly-silicon thin film transistor considering the grain boundary effect on the turn-on behaviour is proposed. Small geometry effects are also incorporated to develop an accurate expression for the threshold voltage and the current-voltage ( I - V ) characteristics in the turn-on region. Further, the channel length dependent threshold voltage proposed shows good agreement with experimental data and the I - V characteristics with channel dimensions 2 and 0.5 µm are in excellent agreement with experimental results confirming the validity of this model.
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Chopra et al. (2000) studied this question.
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