An explanation is presented for the (100) texture and <100> orientation observed in Si graphoepitaxy by laser and strip heater recrystallization. With radiational heating, solid crystalline ribbons and islands, having a predominance of (100) texture, can coexist with molten Si. Crystallites with (100) texture and <100> parallel to the axis of a surface‐relief grating are preferentially retained in partially molten regions, and these crystallites seed subsequent solidification, yielding the overall orientation.
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Smith et al. (1983) studied this question.