Lateral grain with a maximum grain size of ∼60 µm was grown by high speed scanning of a molten region in amorphous Si (a-Si) films formed by micro-thermal-plasma-jet irradiation. The a-Si transformed into crystalline through solid phase crystallization, followed by melting and recrystallization induced by the movement of molten region. The laterally crystallized Si films show a high crystalline volume fraction of ∼100%. Thin film transistors were fabricated using Si films formed by high-speed (4000 mm/s) lateral crystallization, and a very high field effect mobility of 350 cm 2 V -1 s -1 was successfully obtained.
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Hayashi et al. (2010) studied this question.
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