Field emission display device structure based on double-gate driving principle for achieving high brightness using a variety of field emission nanoemitters

In order to apply various cold cathode nanoemitters in a field emission display (FED) and to achieve high brightness, a FED device structure with double gates and corresponding driving method have been proposed. Individual pixel addressing can be achieved by applying proper sequence of positive or negative voltage to the lower gate and upper gate, respectively. The feasibility of the device has been demonstrated by using carbon nanotube and tungsten oxide nanowire cold emitters. Display of moving images has been demonstrated and high luminance up to 2500cd∕m2 was obtained. The reported device structure is versatile for nanoemitters regardless of substrate or preparation temperature. The results are of significance to the development of FED using nanoemitters.