A breakthrough in graphene‐oxide/silicon heterojunction solar cells is presented in which edge‐oxidized graphene and an in‐plane charge transfer dopant (Nafion) are combined to form a high‐quality passivating contact scheme. A graphene oxide (GO):Nafion ink is developed and an advanced back‐junction GO:Nafion/n‐Si solar cell with a high‐power conversion efficiency (18.8%) and large area (5.5 cm2) is reported. This scalable solution‐based processing technique has the potential to enable low‐cost carbon/silicon heterojunction photovoltaic devices.
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Gao et al. (2022) studied this question.
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