Two kinds of magnetic tunnel junctions with Co2FeSi electrodes are compared. Using Co2FeSi single layers a tunnel magnetoresistance of 52% is reached, whereas the magnetization of the Co2FeSi is only 75% of the expected value. By using [Co2MnSi∕Co2FeSi]x10 multilayer electrodes the magnetoresistance can be increased to 114% and the full bulk magnetization is reached. All junctions show an inverse tunnel magnetoresistance, when the electrons are tunneling from the Co–Fe into the Heusler compound electrode. This results from a special band structure feature of full Heusler compounds, which is robust even for atomic disorder in the films.
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Ebke et al. (2006) studied this question.
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