A systematic study of electronic transport properties was carried out for ZnO thin films grown on high-temperature annealed buffer layers of semi-insulating Mg0.15Zn0.85O. As functions of growth temperature and oxygen pressure during laser molecular-beam epitaxy growth, there can be seen optimum growth conditions where gross concentration of intrinsic defects is thought to be reduced. For the best qualified film, Hall mobilities of 5000cm2V−1s−1 at 100K and 440cm2V−1s−1 at 300K were recorded with the residual electron densities of 4×1014 and 9×1015cm−3, respectively.
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Tsukazaki et al. (2006) studied this question.