This paper reports a MOS transistor mismatch model applicable for submicron CMOS technologies and developed based on the industry standard BSLM3v3 model. A simple and unified expression was derived to formulate the effect of MOSFET mismatch on drain current variance. A way to quickly estimate the drain current mismatch was also suggested. The model has been integrated into HSPICE, and results obtained from simulation and measurements were compared.
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Zhang et al. (2001) studied this question.
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