High room-temperature optical gain in Ga(NAsP)/Si heterostructures

We analyze the modal gain of Ga(NAsP) multi quantum-well heterostructures pseudomorphically grown on (001) silicon substrate by metal-organic vapor-phase epitaxy. Using the variable stripe length method, we obtain high modal gain values up to 78 cm−1 at room temperature that are comparable to the values of common high quality III-V laser material. We find good agreement between experimental results and theoretically calculated gain spectra obtained using a microscopic model. The results underline the high potential of Ga(NAsP) as an active material for directly electrically pumped lasers on silicon substrate.