The effect of carbon on the copper precipitation behaviour of dislocation‐free silicon crystals with low oxygen concentration, is studied by infra‐red microscopy, high‐resolution X‐ray topography and infra‐red spectrophotometry. A growth mechanism is proposed for the copper precipitates which is based on indentation at silicon carbide or silica precipitates, followed by climb of dislocation loops. The main type of dislocation likely to produce the observed pattern, is thought to be the 〈100〉 edge dislocations.
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Fiermans et al. (1967) studied this question.
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