Dislocation velocity in copper electron irradiated at 100 K

Single crystals of copper are electron irradiated at 100 K and dislocation velocity in the crystal is measured by the etch pit technique at 4.2, 25, and 100 K. It is found that the irradiation reduces the velocity considerably and increases its stress dependence. The dislocation velocity is strongly temperature dependent and it is examined assuming a thermal activation theory. A non-linear relationship observed in the Arrhenius plots is discussed.