The temperature dependence of current is investigated experimentally for silicon-germanium (Si-Ge) multi-quantum-well p-i-n devices on Si substrates as uncooled bolometer active layers. Temperature coefficient of resistance values as high as -5.8%/K are recorded. This value is considerably higher than that of even commercial bolometer materials in addition to being well above the previous efforts based on CMOS compatible materials.
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Atar et al. (2011) studied this question.
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