A PbS nanocrystal-C60 photovoltaic device for infrared light harvesting

PbS nanocrystal (nc-PbS)-C60 photovoltaic devices are demonstrated, in which nc-PbS function as electron donors, showing infrared photosensitivity up to 1600nm. Annealing nc-PbS is proved to remove capping oleic acid ligands, studied using x-ray photoelectron spectroscopy, significantly improving the short circuit current, open circuit voltage, and fill factor. The device performance is rationalized by quantum confinement in nc-PbS and energy level alignment at the heterojunction based on direct measurements of nc-PbS ionization potential using ultraviolet photoelectron spectroscopy.