Bismuth Nanocrystal-Seeded III-V Semiconductor Nanowire Synthesis

Bismuth (Bi) nanocrystals are used for solution−liquid−solid (SLS) synthesis of crystalline InAs, GaP, GaAs, and InP nanowires at temperatures between 300 and 340 °C in trioctylphosphine (TOP) and trioctylphosphine oxide (TOPO), and trioctylamine (TOA). Bi nanocrystals are observed at the nanowire tips, confirming their role as crystallization seeds. The nanowires are characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS), and X-ray diffraction (XRD).