The gas‐phase decompositions of methylsilane and methylsilane‐ d 3 have been investigated in a single‐pulse shock tube at 4700 torr total pressure in the temperature range of 1125–1250 K. For CH 3 SiD 3 at 1200 K three primary steps occur in the homogeneous decomposition with efficiencies in parentheses: , , and . For CH 3 SiH 3 at 1200 K the primary CH 4 elimination efficiency is 0.09 while the total primary H 2 elimination efficiency is 0.91. Minor product formations of C 2 H 4 , acetylene, dimethylsilane, and SiH 4 are discussed.
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Sawrey et al. (1984) studied this question.
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