The composition and growth direction of epitaxial SiGe alloy nanowires (NWs) grown via the Au-catalyzed vapor-liquid-solid technique can be controlled by varying growth conditions. These alloy NWs can adopt either Si-like or Ge-like characteristics. Si-like growth is characterized by Au-coated ⟨111⟩-oriented NWs for low pressure growth and Au-free ⟨112⟩-oriented NWs for higher pressure growth. Ge-like NWs always follow ⟨111⟩ and grow with Au-free sidewalls.
No takes yet. Share an insight, caveat, or question.
Dailey et al. (2010) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: