We show that it is necessary to eliminate carrier diffusion in the active region for viable vertical-cavity lasers (VCLs) with small dimensions. However, methods that work well in reducing lateral carrier leakage in narrow ridge-waveguide lasers such as silicon induced disordering may be problematic in VCL structures. Encouraging results from novel methods for impurity free intermixing for VCL applications are presented.
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Naone et al. (1998) studied this question.
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