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The authors present a new approach for the fabrication of active microdisk resonators using focused ion beam (FIB) followed by selective wet-chemical etching. This efficient technique enables the placement of the devices at any region of a sample and facilitates prototyping of monolithical integration. Also, it allows the production of very smooth walls required by the resonators. High-quality resonators with an active region based on high-gain InGaAsP∕InP quantum wells are demonstrated using this technique. Emission in the C-band at whispering-gallery modes is observed.
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Barea et al. (2009) studied this question.
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