Monte Carlo simulation of submicron GaAs n+ −i(n)−n+ diode

Monte Carlo simulation of electron transport in a GaAs diode, of n+−i(n)−n+ structure, with a 0.25 μm− or 0.5 μm−long active layer is described. The anode voltage ranges from 0.25 V to 1.0 V. The distributions of electron energies and electron velocities, and the profiles of the electron density, electric field, potential, and average electron velocity are computed. Based on these data, the near ballistic nature of the electron transport in the 0.25/um−long diode and the importance of the back-scattering of electrons from the anode n+−layer are discussed. Also, the effects of the lattice temperature and doping on the length of the active layer, and a comparison with a Si diode are discussed.