Contact Engineering Using Manganese, Chromium, and Bathocuproine in Group 14 Phthalocyanine Organic Thin-Film Transistors

Silicon and tin(IV) phthalocyanines, which have been demonstrated as simple-to-synthesize materials for n-type organic thin-film transistors (OTFTs), have relatively shallow lowest unoccupied molecular orbital (LUMO) levels that create a Schottky barrier with the gold source–drain contacts typically used in device fabrication. To reduce the contact resistance ( R C ) associated with this barrier and improve the OTFT performance, we fabricated bottom-gate top-contact (BGTC) devices using low-work-function metals (Mn/Cr) and an electron dopant material (bathocuproine, BCP) as contact interlayers. We characterized two tin phthalocyanines (SnPcs), tin bis(pentafluorophenoxy)phthalocyanine (F 10 -SnPc) and tin bis(2,4,6-trifluorophenoxy)phthalocyanine (246F-SnPc), as organic semiconductors (OSCs) and compared them to their silicon phthalocyanine (SiPc) analogues. We found that using Mn and Cr interlayers with SiPc OTFTs reduces R C to as low as 11.8 kΩ cm and reduces the threshold voltage ( V T ) to as low as 7.8 V while improving linear region characteristics compared to devices using silver or gold electrodes only. BCP interlayers appear to reduce V T in all SiPc and SnPc devices and increase the off-state conductivity of SnPc devices if covering the entire OSC. Overall, this work demonstrates the potential for metal interlayers and solid-state organic interlayers for improving electron transport in low-cost, n-type OTFTs using group 14 phthalocyanines.