Understanding the defect chemistry of lead-halide perovskites is of paramount importance to further progress toward exploitation of these materials. Here, we combine recent experimental observations on the behavior of MAPbI 3 upon exposure to I 2 vapor with first-principles calculations to extract a global picture of defect chemistry in lead-halide perovskites. By matching the reported experimental observables we disclose the origin of the p-doping observed upon exposing MAPbI 3 to I 2 and highlight its consequences on the charge and ion transport and trapping activity. Electron/hole traps related to positive/negative interstitial iodine dominate the defect chemistry in intrinsic conditions, while in p-doped MAPbI 3, electrons are mainly trapped by positive interstitial iodine and neutral lead vacancies. I 2 spontaneously dissociates on iodine vacancies, leading to vacancy passivation and to the formation of positive interstitial iodine. I 2 spontaneously dissociates on nondefective MAPbI 3 (001) surfaces to form pairs of negative/positive interstitial iodine. Upon trapping a hole/electron pair at negative/positive interstitial iodine, I 2 release becomes thermodynamically favored, possibly representing a photoinduced trap-curing mechanism.
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Meggiolaro et al. (2018) studied this question.
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