A comprehensive model is presented to study the electrical, thermal, and optical behavior of broad-area traveling-wave InGaAs-AlGaAs semiconductor amplifiers. Finite-element thermal analysis and carrier transport mechanisms are integrated into the beam propagation method to include thermal lensing and optically induced nonlinearities. A self-consistent iteration is developed to simulate the beam filamentation in broad-area semiconductor amplifiers with residual facet reflectivities. The experimentally observed periodic filamentation with intensity minima close to zero is investigated numerically.
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Dai et al. (1997) studied this question.
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