The electronic band structure of V3Ga and V3Si

The electronic band structure of V 3 Ga and V 3 Si is approximated in the tight binding method, allowing for interchain coupling. The effective integrals are also determined from Mattheiss' APW calculation. Special attention is paid to the density of states curve which is found to possess sharp peaks in the vicinity of the Fermi energy, as was suggested by Clogston and Jaccarino.