A prototype very-large-scale integrated circuit (VLSI) reliability simulator is described. Software modules for hot-carrier effects have been developed. Popular substrate current models are implemented in the simulator. Experiments were performed to establish the relationship between transistor model parameter changes and the substrate current level. The circuit reliability simulation techniques can be extended to include dielectric breakdown and interconnect electromigration effects.>
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Sheu et al. (1989) studied this question.
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