The synthesis methods and properties of catalyst-free III–V nanowires with molecular beam epitaxy (MBE) are reviewed. The two main techniques are selective-area epitaxy (SAE) and gallium-assisted synthesis. The excellent structure and ultra-high purity characteristics of the grown nanowires are presented by Raman and photoluminescence spectroscopy.
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Spirkoska et al. (2008) studied this question.
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