We demonstrate metal organic vapour phase epitaxy growth of GaP/GaAs 1− x P x / GaP double heterostructure nanowires on GaP(111)B, and report bright photoluminescence at room temperature. By using different PH 3 to AsH 3 flow ratios during growth of the GaAs 1− x P x segment, we are able to control the composition of the segment, making it feasible to tune the wavelength of the emitted light. A photoluminescence system was employed to characterize the luminescence, and x-ray energy dispersive spectrometry and x-ray diffraction studies were used to investigate the composition of the segment. These double heterostructure nanowires could in the future be used in optoelectronic devices and as multiple-wavelength fluorescent markers for biomedical applications.
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Svensson et al. (2005) studied this question.
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