Thickness dependent structural, optical and electrical properties of Se85In12Bi3nanochalcogenide thin films

Our aim is to study the thickness dependent effects on structure, electrical and optical properties of Se 85 In 12 Bi 3 nanochalcogenide thin films. Bulk alloy of Se 85 In 12 Bi 3 was synthesized by melt-quenching technique. The amorphous as well as glassy nature of Se 85 In 12 Bi 3 chalcogenide was confirmed by non-isothermal Differential Scanning Calorimetry (DSC) measurements. The nanochalcogenide thin films of thickness 30, 60 and 90 nm were prepared on glass/Si wafer substrate using Physical Vapour Condensation Technique (PVCT). From XRD studies it was found that thin films have amorphous texture. The surface morphology and particle size of films were studied by Field Emission Scanning Electron Microscope (FESEM). From optical studies, different optical parameters were estimated for Se 85 In 12 Bi 3 thin films at different thickness. It was found that the absorption coefficient ( α ) and extinction coefficient (k) increases with photon energy and decreases with film thickness. The optical absorption process followed the rule of indirect transitions and optical band gap were found to be increase with film thickness. The value of Urbach energy (E t ) and steepness parameter ( σ ) were also calculated for different film thickness. For electrical studies, dc-conductivity measurement was done at different temperature and activation energy (ΔE c ) were determined and found to be increase with film thickness.