This paper reports a theoretical and experimental study of a photothermal deflection spectroscopy (PDS) method for thin films. Multiple reflection of the incident light is taken into account in the theoretical analysis, using a simplified one-dimensional model. An experiment was performed to estimate the optical absorption coefficients α of a-Si:H and µc-Si:H films. It is possible to obtain the difference in α between these Si films very accurately even for αL<10-2. Thus PDS is very effective for measuring the small absorption coefficients of thin films.
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Hata et al. (1985) studied this question.
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