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Nonradiative states in GaAs and InP are investigated by photoacoustic spectroscopy. InGaAs, we observed (1) an increase of photoacoustic (PA) signals with a decrease of photoluminescence (PL), (2) a PA signal due to nonradiative states near the crystal surface, and (3) a PA signal due to nonradiative states in the bulk which act as absorption levels of PL. We found that the PA signal intensity in InP at the band edge is much smaller than that of GaAs.
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Wasa et al. (1980) studied this question.