The effect of adsorbed oxygen on the photoelectron yield of bulk polycrystalline tungsten was studied at photon energies of 7.7, 10.2, 11.8, 16.9, and 21.2 eV. Use of ultrahigh vacua ∼3 × 10−10 torr ensured sample cleanliness prior to oxygen exposure. The photoelectron yield decreases with oxygen exposure because of the increase in the electronic work function of the tungsten photocathode. However, at hv = 21.2 eV, an increase in photoelectron yield with oxygen exposure also appears and is believed to be due to photoelectron emission from the adsorbed oxygen atoms.
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Waclawski et al. (1967) studied this question.
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