Formation of Hg1−xCdxTe by Hg Ion Bombardment of CdTe Single Crystals

Layers of Hg1−xCdxTe have been formed by Hg+ ion bombardment of intrinsic CdTe single crystals. Spectral photoresponse measurements indicate a variation in x through the thickness of the Hg1−xCdxTe ranging from x≃0.2, at the surface, to x = 1 corresponding to a bandgap of 0.12 and 1.5 eV, respectively. The material has a conductivity of typically 10−5 (Ω·cm)−1 at 77°K and a 2 μ thickness in the region where x≤0.3.