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Low energy ions were injected into single crystal Cu, sintered UO2 and glass and the probabilities of entrapment measured, as a function of ion energy from 50 eV to 3 keV, by heating the targets after irradiation and recording the ratio of quantity of gas released to incident ion fluence. Values of entrapment probability increase from zero at low ion energies to about unity at 1 keV. The rate of thermal gas evolution was also recorded as a function of temperature during the post-bombardment target tempering, enabling deduction of activation energies for evolution. These activation energies are correlated with published data on the annealing of point and extended defects in the solids and with self diffusion energies.
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Cavaleru et al. (1973) studied this question.
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