Results of the investigation by means of resistivity measurements of the formation and annihilation of donors by heat treatment of p-type and n-type Czochralski silicon within the temperature range of 550 to 1150 °C are discussed. In this way three different kinds of oxygen donors can be distinguished which are generated during prolonged preannealing at 450 °C. Two more donors are formed by annealing at 550 copy to °C and further ones at 650 and 750 °C. The results gained are to a large extent independent of the conduction type.
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Jakob Reichel (1981) studied this question.
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